Design and Fabrication of 940 nm VCSEL Single-emitter Device

As a key part of vertical cavity surface emitting laser (VCSEL), active region will seriously affect the threshold and efficiency device. To obtain appropriate wavelength material gain, design In<sub>0.18</sub>Ga<sub>0.82</sub>As strain compensated quantum well is optimized. The relationship between lasing multiple wells (MQWs) thickness calculated. Considering influence temperature wavelength, chosen as 6 nm, barrier 8 corresponding to 929 nm. gain characteristics MQWs at different temperatures are simulated by Rsoft. exceeds 3300/cm 300 K, drift coefficient peak 0.3 nm/K. In this work, Al<sub>0.09</sub>Ga<sub>0.91</sub>As A<sub>l0.89</sub>Ga<sub>0.11</sub>As high- low-refractive index distributed Bragg reflector (DBR), 20 nm graded layer inserted two types materials. DBR on valence band reflection spectrum calculated analyzed. increase can lead bandwidth decrease. phase P-DBR N-DBR transmission matrix mode (TMM): reflectance over 99% shift zero 940 optical field distribution whole VCSEL structure simulated, in which standing wave overlaps with region, maximum be obtained. Using finite element method (FEM), effect oxidation confined injection current simulated. effectively limited position hole, its density stronger more uniform. distributions modes photonic crystal-vertical (PC-VCSEL) have resonant wavelengths. values quality factor Q PC-VCSEL calculated, fundamental higher than that transverse mode. It demonstrated crystal air hole realize output basic increasing loss high order size 22 μm successfully fabricated, period 5 μm, pore diameter 2.5 etching depth 2 μm. Under continuous test, slope 0.66 mW/mA, power 9.3 mW mA, 948.64 mA current. Multiple wavelengths large width observed VSCEL, an obvious multi-transverse reaches 2.55 mW, side suppression ratio (SMSR) 25 dB, less 0.2 indicating has strong control mode, 946.4 17 mA.